MMBT4403

ADVANCEDINFORMATION ADVANCEDINFORMATIONMMBT4403SMALLSIGNALTRANSISTORS (PNP)SOT-23.122 (3.1).118 (3.0).016 (0.4)3 .056 (1.43) .052 (1.33)FEATURES ¨PNPSilicon Epitaxial Planar Transistorfor switching and amplifier applications.Top View¨As complementary type, the NPN transistor MMBT4401 is recommended.¨This transistor is also available in the TO-92 case withthe type designation 2N4403.12max. .004 (0.1).007 (0.175).005 (0.125).037(0.95).037(0.95).045 (1.15).037 (0.95) MECHANICALDATACase: SOT-23 Plastic PackageWeight:approx. 0.008gMarking code: 2T.016 (0.4).016 (0.4).102 (2.6).094 (2.4)Dimensions in inches and (millimeters)Pin configuration1 = Base, 2 = Emitter, 3 = Collector.MAXIMUM RATINGS AND THERMALCHARACTERISTICSRatings at 25¡C ambient temperature unless otherwise specifiedSYMBOLVALUEUNITCollector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltageCollector CurrentPower Dissipation FR-5 Board,* TA=25°CDerate above 25°CPower Dissipation Alumina Substrate,** TA=25°CDerate above 25°CThermal Resistance, Junction to AmbientJunction TemperatureStorage Temperature RangeFR-5 Board Alumina SubstrateÐVCBOÐVCEOÐVEBOÐICPtotPtotRQJATjTS40405.06002251.83002.4556417150Ð55 to +150VoltsVoltsVoltsmAmWmW/°CmWmW/°C°C/W¡C¡C*FR-5 = 1.0 x 0.75 x 0.062 in.**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.2/17/99MMBT4403

ELECTRICALCHARACTERISTICS

Ratings at 25¡C ambient temperature unless otherwise specified

SYMBOL

MIN.

MAX.

UNIT

Collector-Base Breakdown Voltageat ÐIC= 0.1 mA, IE = 0

Collector-Emitter Breakdown Voltage(1)at ÐIC = 1 mA, IB = 0

Emitter-Base Breakdown Voltageat ÐIE = 0.1 mA, IC = 0

Collector-Emitter Saturation Voltage(1)at ÐIC = 150 mA, ÐIB = 15 mAat ÐIC = 500 mA, ÐIB = 50 mABase-Emitter Saturation Voltage(1)at ÐIC = 150 mA, ÐIB= 15 mAat ÐIC = 500 mA, ÐIB= 50 mACollector-Emitter Cutoff Currentat ÐVEB = 0.4 V, ÐVCE = 35 VEmitter-Base Cutoff Currentat ÐVEB = 0.4 V, ÐVCE = 35 VDC Current Gain

at ÐVCE = 1 V, ÐIC = 0.1 mAat ÐVCE = 1 V, ÐIC = 1 mAat ÐVCE = 1 V, ÐIC = 10 mAat ÐVCE = 2 V, ÐIC = 150 mAat ÐVCE = 2 V, ÐIC = 500 mA

Input Impedance

at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHzCurrent Gain-Bandwidth Product

at ÐVCE = 10 V, ÐIC = 20 mA, f = 100 MHzCollector-Base Capacitance

at ÐVCB = 10 V, IE= 0, f = 1 MHz Emitter-Base Capacitance

at ÐVEB = 0.5 V, IC= 0, f = 1 MHz,

NOTES:

(1) Pulse test: pulse width ²300mduty cycle ²2%

ÐV(BR)CBOÐV(BR)CEOÐV(BR)EBOÐVCEsatÐVCEsatÐVBEsatÐVBEsatÐICEXÐIBEVhFEhFEhFEhFEhFEhiefTCCBOCEBO

40405.0ÐÐ0.75ÐÐÐ3060100100201.5200ÐÐ

ÐÐÐ0.400.750.951.30100100ÐÐÐ300Ð15Ð8.530

VoltsVoltsVoltsVoltsVoltsVoltsVoltsnAnAÐÐÐÐÐkWMHzpFpF

MMBT4403

ELECTRICALCHARACTERISTICS

Ratings at 25¡C ambient temperature unless otherwise specified

SYMBOL

MIN.

MAX.

UNIT

Voltage Feedback Ratio

at ÐVCE= 10 V, ÐIC= 1 mA, f = 1 kHzSmall Signal Current Gain

at ÐVCE= 10 V, ÐIC= 1 mA, f = 1 kHzOutput Admittance

at ÐVCE= 1 V, ÐIC= 1 mA, f = 1 kHz

Delay Time

at ÐIB1= 15 mA, ÐIC= 150 mA, ÐVCC = 30 V, ÐVEB = 2 VRise Time

at ÐIB1= 15 mA, ÐIC = 150 mA, ÐVCC = 30 V, ÐVEB = 2 VStorage Time

at IB1= ÐIB2 = 15 mA, ÐIC= 150 mA, ÐVCC = 30 VFall Time

at IB1= ÐIB2= 15 mA, ÐIC= 150 mA, ÐVCC = 30 V

hrehfehoetdtrtstf

0.1 á 10Ð4

601.0ÐÐÐÐ

8 á 10Ð4500100152022530

ÐÐmSnsnsnsns

SWITCHING TIME EQUIVALENT TEST CIRCUIT

FIGURE 1 - TURN-ON TIME

+30V200W+16 V0-2 V< 2 ns1kWC * < 10 pF S Scope rise time < 4ns󰀀 *Total shunt capacitance of test jig,󰀀 connectors and oscilloscope

+16 V0-14 V< 20 ns-4 V1kWC < 10 pF S* FIGURE 2 - TURN-OFF TIME

+30V200W1.0 to 100 ms, DUTY CYCLE Å 2%1.0 to 100 ms, DUTY CYCLE Å 2%This datasheet has been download from:

www.datasheetcatalog.comDatasheets for electronics components.