Semiconductor memory repair methodology using quas

专利名称：Semiconductor memory repair methodology

using quasi-non-volatile memory

发明人：Richard J. McPartland申请号：US10739701申请日：20031218

公开号：US20050149782A1公开日：20050707

专利附图：

摘要：A device and method is provided for effecting soft repair of semiconductormemory embedded within an integrated circuit. The invention temporarily and in a non-volatile or quasi-non-volatile manner stores data within the structure of the

semiconductor chip. This data respects chip performance at a first test point and may bemade available directly from the chip at a second test point. In a particular embodimentof the invention, on-chip non-volatile memory is utilized to communicate reconfigurationcodes between two testpoints for soft repair of SRAM and DRAM memory. Areconfiguration code generated for the first test point is stored in the on-chip non-volatile memory and read out from that memory at the second test point. Illustratively,the on-chip non-volatile memory is implemented as quasi-non-volatile memory. In afurther embodiment, the invention operates to communicate the reconfiguration codesbetween a single wafer probe testpoint and a package testpoint.

申请人：Richard J. McPartland

地址：Nazareth PA US

国籍：US

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