专利名称：High performance device design发明人：Chien-Chao Huang,Fu-Liang Yang申请号：US11243959申请日：20051005
公开号：US20070075377A1公开日：20070405
专利附图：
摘要：A semiconductor structure having a recessed active region and a method forforming the same are provided. The semiconductor structure comprises a first and asecond isolation structure having an active region therebetween. The first and secondisolation structures have sidewalls with a tilt angle of substantially less than 90 degrees.
The active region is recessed. By recessing the active region, the channel width isincreased and device drive current is improved.
申请人：Chien-Chao Huang,Fu-Liang Yang
地址：Hsin-Chu TW,Hsin-Chu TW
国籍：TW,TW
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