2SB1580资料

2SB1580 / 2SB1316 / 2SB1567

Transistors

Power Transistor (−100V , −2A)

2SB1580 / 2SB1316 / 2SB1567

!Features

1) Darlington connection for high DC current gain.2) Built-in resistor between base and emitter.3) Built-in damper diode.

4) Complements the 2SD2195 / 2SD1980 / 2SD2398.

!External dimensions (Units : mm)

2SB15801.01.50.44.02.50.5(1)3.00.5(3)1.50.41..51.6(2)!Absolute maximum ratings (Ta = 25°C)

ParameterCollector-base voltageCollector-emitter voltageEmitter-base voltageCollector current2SB1580Collector power dissipation2SB13162SB1567TjTstgPCSymbolVCBOVCEOVEBOICLimits−100−100−8−2−32110220150−55∼+150UnitVVVA(DC)A(Pulse)WW(Tc=25°C)WW(Tc=25°C)°C°CROHM : MPT3EIAJ : SC-62(1) Base(Gate)(2) Collector(Drain)(3) Emitter(Source)∗1∗22SB13160.750.45.51.5(3)(2)(1)2.30.90.90.652.3Junction temperatureStorage temperature∗1 Single pulse Pw=100ms ∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board.5.16.5C0.51.00.5ROHM : CPT3EIAJ : SC-632.59.5!Packaging specifications and hFE

TypePackagehFE MarkingCodeBasic ordering unit (pieces)∗Denotes hFE15.012.08.02SB1580MPT31k ∼ 10kBN∗T10010002SB1316CPT31k ∼ 10k−TL25002SB1567TO-220FN1k ∼ 10k−−5002SB156710.03.2φ 2.31.50.50.8Min.(1) Base(Gate)(2) Collector(Drain)(3) Emitter(Source)4.52.8!Circuit schematic

C14.05.01.21.30.82.2.(1)(2)(3)(1)(2)(3)0.752.6(1) Base(Gate)(2) Collector(Drain)(3) Emitter(Source)BROHM : TO-220FNR1R1 3.5kΩR2 300ΩR2EB: BaseC: CollectorE: Emitter!Electrical characteristics (Ta = 25°C)

ParameterCollector-base breakdown voltageCollector-emitter breakdown voltageCollector cutoff currentEmitter cutoff currentCollector-emitter saturation voltageDC current transfer ratioOutput capacitance∗Measured using pulse current.SymbolBVCBOBVCEOICBOIEBOVCE(sat)hFECobMin.−100−100−−−1000−Typ.−−−−−−35Max.−−−10−3−1.510000−UnitVVµAmAV−pFConditionsIC = −50µAIC = −5mAVCB = −100VVEB = −7VIC/IB = −1A/−1mAVCE = −2V , IC = −1AVCB = −10V , IE = 0A , f = 1MHz**