专利名称：Structure for thermally assisted MRAM发明人：Anthony J. Annunziata,Lucian
Prejbeanu,Philip L. Trouilloud,Daniel C.Worledge
申请号：US14583997申请日：20141229公开号：US09515251B2公开日：20161206
专利附图：
摘要：A mechanism is provided for fabricating a thermally assisted magnetoresistiverandom access memory device. A bottom thermal barrier is formed on a bottom contact.
A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunneljunction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrieris formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the topferromagnetic layer. A top contact is formed on the top thermal barrier. The top contactis reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layereach have a second diameter. The first diameter of the top contact is smaller than thesecond diameter.
申请人：International Business Machines Corporation,Crocus Technology SA
地址：Armonk NY US,Grenoble FR
国籍：US,FR
代理机构：Cantor Colburn LLP
代理人：Vazken Alexanian
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