METHOD AND SYSTEM FOR INTEGRATION OF ELEMENTAL AND

专利名称：METHOD AND SYSTEM FOR INTEGRATION

OF ELEMENTAL AND COMPOUNDSEMICONDUCTORS ON A CERAMICSUBSTRATE

发明人：Vladimir Odnoblyudov,Cem Basceri,Shari

Farrens,Ozgur Aktas

申请号：US15788597申请日：20171019

公开号：US20180114693A1公开日：20180426

专利附图：

摘要：A method of fabricating a semiconductor structure includes providing anengineered substrate including a polycrystalline substrate, a barrier layer encapsulatingthe polycrystalline substrate, and a bonding layer coupled to the barrier layer. Themethod further includes forming a first silicon layer coupled to the bonding layer,forming a dielectric layer coupled to the first silicon layer, forming a second silicon layercoupled to the dielectric layer, removing a portion of the second silicon layer and acorresponding portion of the dielectric layer to expose a portion of the first silicon layer,forming a gallium nitride (GaN) layer coupled to the exposed portion of the first siliconlayer, forming a gallium nitride (GaN) based device coupled to the GaN layer, and forminga silicon-based device coupled to a remaining portion of the second silicon layer.

申请人：QROMIS, Inc.

地址：Santa Clara CA US

国籍：US

更多信息请下载全文后查看