Silicon single crystal wafer fabricating method an

专利名称：Silicon single crystal wafer fabricating

method and silicon single crystal wafer

发明人：Masayuki Watanabe,Junichi Osanai,Akihiko

Kobayashi,Kazuhiko Kashima,HiroyukiFujimori

申请号：US10941993申请日：20040916

公开号：US20050039671A1公开日：20050224

专利附图：

摘要：At the time of fabricating a silicon single crystal wafer from a nitrogen-doped

silicon single crystal grown according to the Czochralski method, a silicon single crystalwafer covered with a region in which an oxygen precipitation bulk micro defect and anoxidation induced stacking fault mixedly exist is subjected to heat treatment at atemperature of 1100 to 1300° C. in a reducing gas or inert gas atmosphere. In such amanner, a method of fabricating a high-quality silicon single crystal wafer and a siliconsingle crystal wafer in which no grown-in crystal defects exist in the whole surface andoxygen precipitation bulk micro defects (BMD) are formed at a sufficiently high density todisplay the IG effect on the inner side can be provided. The single crystal wafer can besuitably used to form an operation region of a semiconductor device.

申请人：Masayuki Watanabe,Junichi Osanai,Akihiko Kobayashi,KazuhikoKashima,Hiroyuki Fujimori

地址：Hadano-city JP,Nishiokitama-gun JP,Sagamihara-city JP,Tokyo JP,Hadano-city JP

国籍：JP,JP,JP,JP,JP

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