Method for producing silicon single crystal

专利名称：Method for producing silicon single crystal发明人：中村 剛,川崎 栄一,小林 省吾,大城 善博申请号：JP2016101103申请日：20160520公开号：JP6631406B2公开日：20200115

摘要：PROBLEM TO BE SOLVED: To provide a silicon single crystal producing methodcapable retaining such a region reliably as can perform a desired sputtering or plasmaetching even without performing a donor killer heat treatment.SOLUTION: A siliconsingle crystal producing method comprises: a raising step of raising a seed crystalbrought into contact with a silicon molten liquid and raising the crucible while rotatingthe same, thereby to form a direct trunk SM2 of a silicon single crystal SM; a separatingstep of separating the silicon single crystal SM from a silicon molten liquid; a stateholding step of lowering the crucible 22 and the silicon single crystal SM thereby to holda state, in which the upper end of the direct trunk SM2 is positioned at the same height asthe upper end of a thermal shield 27 or on the lower side of said upper end; and a taking-out step of extracting the silicon single crystal SM to the outside of a chamber.SELECTEDDRAWING: Figure 4

申请人：株式会社ＳＵＭＣＯ

地址：東京都港区芝浦一丁目２番１号

国籍：JP

代理人：特許業務法人樹之下知的財産事務所

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