Basic cell of gate array semiconductor device, gat

专利名称：Basic cell of gate array semiconductor

device, gate array semiconductor device, andlayout method for gate array semiconductordevice

发明人：Kenji Arai,Hidekazu Kikuchi申请号：US10305246申请日：20021127

公开号：US20030226128A1公开日：20031204

专利附图：

摘要：A basic cell () of a gate array semiconductor device, including first and second p-

channel MOS transistors (P, P) and first and second n-channel MOS transistors (N, N),wherein the first p-channel MOS transistor (P) and the first n-channel MOS transistor (N)are disposed so as to share or divide a first gate (), the second p-channel MOS transistor(P) and the second n-channel MOS transistor (N) are disposed to share or divide a secondgate (), and the first and second gates have portions bent at about 45 degrees withrespect to a lengthwise direction.

申请人：ARAI KENJI,KIKUCHI HIDEKAZU

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