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Basic cell of gate array semiconductor device, gat

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专利名称:Basic cell of gate array semiconductor

device, gate array semiconductor device, andlayout method for gate array semiconductordevice

发明人:Kenji Arai,Hidekazu Kikuchi申请号:US10305246申请日:20021127

公开号:US20030226128A1公开日:20031204

专利附图:

摘要:A basic cell () of a gate array semiconductor device, including first and second p-

channel MOS transistors (P, P) and first and second n-channel MOS transistors (N, N),wherein the first p-channel MOS transistor (P) and the first n-channel MOS transistor (N)are disposed so as to share or divide a first gate (), the second p-channel MOS transistor(P) and the second n-channel MOS transistor (N) are disposed to share or divide a secondgate (), and the first and second gates have portions bent at about 45 degrees withrespect to a lengthwise direction.

申请人:ARAI KENJI,KIKUCHI HIDEKAZU

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