专利名称:Method for producing silicon single crystal发明人:玉置 晋,高瀬 伸光申请号:JP2017134449申请日:20170710公开号:JP2019014633A公开日:20190131
专利附图:
摘要:Problem to be solved: to provide a method of manufacturing a silicon singlecrystal capable of easily suppressing separation of oxygen concentration in a siliconsingle crystal from a target value. A method of manufacturing a silicon single crystal is aselection step for selecting a quartz crucible disposed in a single crystal pulling device
based on the weight of a quartz crucible having a cylindrical side portion and a bottom ofa curved surface continuous to the lower end of the side portion, and a single crystal withquartz crucible selected in the selection process A pulling step is used to provide agrowth step for growing a silicon single crystal. Diagram
申请人:株式会社SUMCO
地址:東京都港区芝浦一丁目2番1号
国籍:JP
代理人:特許業務法人樹之下知的財産事務所
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