Method for producing silicon single crystal

专利名称：Method for producing silicon single crystal发明人：玉置 晋,高瀬 伸光申请号：JP2017134449申请日：20170710公开号：JP2019014633A公开日：20190131

专利附图：

摘要：Problem to be solved: to provide a method of manufacturing a silicon singlecrystal capable of easily suppressing separation of oxygen concentration in a siliconsingle crystal from a target value. A method of manufacturing a silicon single crystal is aselection step for selecting a quartz crucible disposed in a single crystal pulling device

based on the weight of a quartz crucible having a cylindrical side portion and a bottom ofa curved surface continuous to the lower end of the side portion, and a single crystal withquartz crucible selected in the selection process A pulling step is used to provide agrowth step for growing a silicon single crystal. Diagram

申请人：株式会社ＳＵＭＣＯ

地址：東京都港区芝浦一丁目２番１号

国籍：JP

代理人：特許業務法人樹之下知的財産事務所

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