Method for producing silicon single crystal

专利名称：Method for producing silicon single crystal发明人：Shuichi Inami申请号：US120785申请日：20080402

公开号：US20080245291A1公开日：20081009

专利附图：

摘要：A method of growing silicon single crystals with a [110] crystallographic axisorientation by the Czochralski method is provided according to which a silicon seedcrystal doped with a high concentration of boron is used and an included angle of aconical part during shoulder section formation is maintained within a specified range. It is

thereby possible to grow large-diameter and heavy-weight dislocation-free silicon singlecrystals with a diameter of 300 mm or more in a stable manner, without the fear ofdropping the single crystal during pulling up. Therefore, the method can be properlyutilized in producing silicon single crystals as semiconductor materials.

申请人：Shuichi Inami

地址：Tokyo JP

国籍：JP

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